鈻?/div>
Electrical Characteristics
T
a
=
25掳C
卤
3掳C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
BE
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
Transition frequency
Turn-on time
Storage time
Fall time
f
T
t
on
t
stg
t
f
Conditions
I
C
= 鈭?0
mA, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?2
mA
I
C
= 鈭?
A, I
B
= 鈭?0
mA
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
1 MHz
I
C
= 鈭?
A, I
B1
= 鈭?2
mA, I
B2
=
12 mA
V
CC
= 鈭?0
V
20
0.3
2.0
0.5
1 000
1 000
10 000
鈭?
鈭?
MHz
碌s
碌s
碌s
V
Min
鈭?0
鈭?.5
鈭?00
鈭?00
鈭?
Typ
Max
Unit
V
V
碌A
碌A
mA
铮?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
1 000 to 2 500
Q
P
2 000 to 5 000 4 000 to 10 000
Publication date: January 2003
SJD00301AED
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